Description
Integrating high-k ferroelectric oxides like BaTiO3(BTO) with 2D semiconductors offers compelling prospects for next-generation non-volatile memory and neuromorphic computing. Yet, practical implementation is hindered by substrate-induced lattice mismatch in conventional growth, as well as mechanical deformation and defect-induced leakage currents when utilizing freestanding van der Waals membranes. In this work, a defect-tolerant strategy for top-gate integration of freestanding BTO membranes with MoS2 channels is presented. The resulting ferroelectric field-effect transistors (FeFETs) exhibit a record-high memory window of 0.22V nm-1, an ultrahigh dielectric constant of 52, and a near-ideal subthreshold swing of 60mV dec-1. Furthermore, a fully functional 3×4 top-gate FeFET array enabling in-memory logic and synaptic functionalities is demonstrated.
